mespublis.bib
@conference{MateriauxNantes2010,
author = {Jean-Luc Deschanvres and Sébastien Forissier and Antonio Peireira
and Bernard Moine and Germain Rey and Céline Ternon and Daniel Bellet},
title = {Élaboration de matériaux innovants en couches minces par {MOCVD}
pour les cellules solaires de troisième génération.},
booktitle = {Matériaux 2010},
year = {2010},
address = {Nantes (France)},
month = {October},
note = {talk},
timestamp = {2011.08.25}
}
@conference{EMRSspring2012b,
author = {Jean-Luc Deschanvres and Sébastien Forissier and Alexandre Philip
and Carmen Jimenez and Hervé Roussel and Mircea Modreanu},
title = {{{Characterization of Tm and Yb doped yttria thin films grown by
aerosol assisted MOCVD}}},
booktitle = {EMRS Spring Meeting},
year = {2012},
address = {Strasbourg (France)},
month = {May},
note = {talk},
abstract = {In order to enhance the photovoltaic cell efficiency, in this study
we aim to modify the solar spectrum by down conversion to better
meet the silicon's bandgap. As down-converter thin films our work
deals with thulium and ytterbium-doped yttrium oxide. Concerning
near UV and blue wavelength region of the solar spectrum, Thulium
will acts as sensitizer and ytterbium as emitter in near IR. The
rare-earth doped thin films are deposited by aerosol-assisted MOCVD
using organo-metallic precursors such as yttrium acetylacetonate,
thulium and ytterbium tetramethylheptanedionate solved in different
solvents. As host matrix, yttria has received particular attention
due to its high refractive index, large band gap, physical and chemical
stability as well as a rather low phonon energy. As revealed by FTIR
and spectroscopic IR ellipsometry, organic residues are incorporated
in the film related to the deposition temperature used. A subsequent
annealing step provides elimination of the organic residues and has
an influence on the luminescence properties of the layer. The properties
of as-deposited and annealed films where investigated including XRD,
SEM , ellipsometry ( UV- visible and IR), FTIR , emission and life
time measurements.},
timestamp = {2012.06.01}
}
@conference{EMRSspring2012a,
author = {Jean-Luc Deschanvres and Sébastien Forissier and Rached Salhi and
Elisabeth Payrer and Alexandre Philip and Carmen Jimenez and Hervé
Roussel and Ramzi Maalej and Mohieddine Fourrati and Antoine Guile
and Antonio Pereira and Bernard Moine},
title = {Growth and Characterization of luminescent Rare earth doped transparent
thin films for solar spectrum conversion},
booktitle = {EMRS Spring Meeting},
year = {2012},
address = {Strasbourg (France)},
month = {May},
note = {talk},
abstract = {The use of rare earth ions to convert photons to different wavelengths
is well-known from a wide range of applications (e.g. fluorescent
tubes, lasers). Recently, a new potential application has emerged:
the use of rare earth ions for spectral conversion in solar cells.
The main energy loss in photovoltaic cell is related to the so-called
spectral mismatch: low energy photons are not absorbed by a solar
cell while high energy photons are not used efficiently. In order
to enhance the photovoltaic cell efficiency, in this study we aim
to modify the solar spectrum by up or down conversion process to
better meet the silicon's bandgap. As down-converter thin films our
work deals with thulium and ytterbium-doped titania or yttria oxide.
Concerning near UV and blue wavelength region of the solar spectrum,
Thulium will acts as sensitizer and ytterbium as emitter in near
IR. As up converter Erbium and Ytterbium doped thin films are studied.
The rare-earth doped thin films are deposited by aerosol-assisted
MOCVD using organo-metallic precursors such tetramethylheptanedionate
solved in different solvents. As host matrix, yttria and titania
have received particular attention due to its high refractive index,
large band gap, physical and chemical stability as well as a rather
low phonon energy. The properties of as-deposited and annealed films
were investigated by XRD, SEM, ellipsometry, FTIR and are discussed
related to the luminescent properties (emission and life time).},
timestamp = {2012.06.01}
}
@phdthesis{these_manuscrit,
author = {Sébastien Forissier},
title = {Fabrication and characterization of down-conversion materials in
thin films for photovoltaic applications},
school = {École doctorale IMEP-2, Université de Grenoble},
year = {2012},
month = {September},
note = {PhD manuscript (in french)},
abstract = {Structural and luminescence properties of rare-earth-doped (thulium,
terbium and ytterbium) thin films of yttrium oxide and titanium oxide
were studied as a down-converting layer from near-UV to infrared
for integration in solar cells to improve their yield. These thin
films were synthesized by chemical vapor deposition at atmospheric
pressure with organo-metallic precursors and assisted by aerosol
(aerosol assisted MOCVD). The thin films were partially crystallized
as deposited (400°C in the anatase phase for TiO2 , 540°C in the
cubic phase for Y2O3). After annealing the crystallization is greatly
improved and the rare-earth ion luminescence is obtained in both
oxide matrices. The thulium emits in a large band centered around
800 nm and the ytterbium at 980 nm. The terbium emits mainly in the
visible range. Excitation spectra showed that the photon absorption
occurs in the matrix. In the TiO2 matrix a transfer rate from Tm
to Yb of 20 \% was measured for doping of 0,8 \% for both rare-earth,
which corresponds to the quenching limit. The overall measured yield
is low, we showed that the probable reasons were the thin films’
lack of absorption to obtain the excitation of the sensitizer ion
and a low efficiency of luminescence and down-conversion processes.},
keywords = {CVD, thin films, TiO2, Y2O3, Tm, Yb, Tb, Down-conversion},
timestamp = {2014.01.27},
url = {http://tel.archives-ouvertes.fr/tel-00864054}
}
@misc{these_soutenance,
author = {Sébastien Forissier},
title = {Élaboration et caractérisation de couches de conversion de longueur
d'onde pour le photovoltaïque.},
month = {September},
year = {2012},
note = {PhD defense (in french)},
abstract = {Les cellules photovoltaïques ont un rendement théorique limité par
l'adéquation entre le semi-conducteur et le spectre solaire. Ces
travaux visent à améliorer le rendement des cellules en modifiant
le spectre solaire incident sur la cellule par conversion de longueur
d'onde, en absorbant dans le domaine du proche ultraviolet pour émettre
dans le proche infrarouge.
La conversion est recherchée grâce à des terres rares trivalentes
(Yb, Tm, Tb) en matrice dioxyde de titane et yttria. Les couches
minces ont été synthétisées par MOCVD assistée par aérosol à pression
atmosphérique. Après optimisation des paramètres de dépôt les films
sont partiellement cristallisés et leurs propriétés cristallines
et optiques sont améliorées par traitement thermique.
Les propriétés optiques des couches minces obtenues ont montré la
luminescence des différents dopants terres rares via une large absorption
dans l'ultraviolet liée à la matrice.},
timestamp = {2014.01.27}
}
@misc{sem_format,
author = {Sébastien Forissier},
title = {Formats ouverts et logiciels libres},
month = {July},
year = {2010},
note = {lab seminar (in french)},
abstract = {Qui n'a pas connu quelqu'un en recherche d'un chargeur de téléphone
spécifique, ni transpiré au moment de lancer sa présentation powerpoint
sur un autre poste que le sien ? Les formats, physiques et informatiques,
sont présents partout, indispensables clés des véhicules de l'information.
Les formats et les logiciels sont étroitement liés car les premiers
sont crées et lus par les seconds, et le format revêt une grande
importance lorsque l'information devra être transmise ou traitée
avec un logiciel différent de celui de création.},
address = {Grenoble (France)},
booktitle = {LMGP},
timestamp = {2012.10.08}
}
@misc{sem_LMGP_2012,
author = {Sébastien Forissier and Jean-Luc Deschanvres and Bernard Moine},
title = {Couches minces pour la conversion de longueur d'onde pour le photovoltaïque},
month = {March},
year = {2012},
note = {lab seminar (in french)},
address = {Grenoble (France)},
booktitle = {LMGP},
timestamp = {2012.10.08}
}
@conference{IMRC2011,
author = {Sébastien Forissier and Antoine Guille and Hervé Roussel and Carmen
Jimenez and Odette Chaix and Antonio Pereira and Jean-Luc Deschanvres
and Bernard Moine},
title = {Thulium/praseodymium and ytterbium-doped titanium dioxyde thin films
deposited by {MOCVD}},
booktitle = {XX International Materials Research Congress (IMRC)},
year = {2011},
address = {Cancún (Mexico)},
month = {August},
note = {talk},
abstract = {In this study we aim to modify the solar spectrum to better meet the
silicon's bandgap. This could be achieved either by photoluminescence
up-converting devices, or down-converting devices. As down-converter
thin films our work deals with thulium and ytterbium-doped titanium
dioxide. Thulium will acts as sensitizer and ytterbium as emitter.
The rare-earth doped thin films are deposited by aerosol-assisted
MOCVD using organo-metallic precursors such as titanium dioxide acetylacetonate,
thulium and ytterbium tetramethylheptanedionate solved in different
solvents. Different deposition conditions have been studied on silicon
substrates, depending on temperature, dopant concentrations (…).
The films are synthesised in the anatase phase above a deposition
temperature of 400°C. Further annealing is required to exhibit luminescence
and eliminate organic remnants of the precursors. The physicochemical
and luminescent properties of the deposited films were analysed versus
the different deposition parameters and annealing conditions. We
showed that absorbed light is re-emitted by the ytterbium 2F5/2-2F7/2
transition at 980 nm and by a thulium 3F4-3H6 transition band around
800 nm under 330 nm excitation. Decay time measurements confirmed
the energy transfer between thulium an ytterbium. Because the 980
nm emission of Yb3+ is matched with the band gap of crystalline Si,
and the emission of Tm3+ is within its absorption range the phosphors
are a good candidate for silicon-based solar cells.},
timestamp = {2011.07.18}
}
@article{JTST2012,
author = {Sébastien Forissier and Hervé Roussel and Patrick Chaudouet and Antonio
Pereira and Jean-Luc Deschanvres and Bernard Moine},
title = {Thulium and ytterbium-doped titanium oxide thin films deposited by
ultrasonic spray pyrolysis},
journal = {Journal of Thermal Spray Technology},
year = {2012},
volume = {21},
pages = {1263-1268},
note = {article},
abstract = {Thin films of thulium and ytterbium-doped titanium oxide were grown
by metal-organic spray pyrolysis deposition from titanium(IV)oxide
bis(acetylacetonate), thulium(III)tris(2,2,6,6-tetramethyl-3,5-heptanedionate)
and ytterbium(III)tris(acetylacetonate). Deposition temperatures
have been investigated from 300°C to 600°C. Films have been studied
regarding their crystalline and doping quality. Structural and composition
characterisations of TiO2 :Tm,Yb were performed by electron microprobe,
X-ray diffraction and Fourier transform infrared spectroscopy. The
deposition rate can reach 0.8 μm/h. The anatase phase of TiO2 was
obtained after synthesis at 400°C and over. Organic contamination
at low deposition temperature is eliminated by annealing treatments.},
doi = {10.1007/s11666-012-9813-7},
keywords = {CVD, thulium, ytterbium, titanium oxide, thin film},
timestamp = {2012.06.01},
url = {http://link.springer.com/article/10.1007%2Fs11666-012-9813-7}
}
@conference{EMRSspring2011,
author = {Sébastien Forissier and Hervé Roussel and Carmen Jimenez and Odette
Chaix and Antonio Pereira and Amina Bensalah-Ledoux and Jean-Luc
Deschanvres and Bernard Moine},
title = {Thulium and ytterbium-doped titanium oxide thin films deposited by
{MOCVD}},
booktitle = {EMRS Spring Meeting},
year = {2011},
address = {Nice (France)},
month = {May},
note = {poster},
abstract = {In this study we aim to modify the solar spectrum to better meet the
silicon's bandgap. This could be achieved either by photoluminescence
up-converting devices, or down-converting devices. As down-converter
thin films our work deals with thulium and ytterbium-doped titanium
dioxide. Thulium will acts as sensitizer and ytterbium as emitter.
The rare-earth doped thin films are deposited by aerosol-assisted
MOCVD using organo-metallic precursors such as titanium dioxide acetylacetonate,
thulium and ytterbium tetramethylheptanedionate solved in different
solvents. On silicon substrates different deposition conditions have
been studied, depending on temperature, dopant concentrations (…).
Adherent films have been obtained in the deposition temperatures
range from 300°C to 600°C. The deposition rate varies in the 0.1-1
µm/h range. The films are synthesised in the anatase phase above
a deposition temperature of 400°C. Further annealing is required
to exhibit luminescence and eliminate organic remnants of the precursors.
The physicochemical and luminescent properties of the deposited films
were analysed versus the different deposition parameters and annealing
conditions. We showed that absorbed light in the near-UV blue range
is re-emitted by the ytterbium at 980nm and by a thulium band around
800nm.},
timestamp = {2011.07.13}
}
@article{Energyprocedia2011,
author = {Sébastien Forissier and Hervé Roussel and Carmen Jimenez and Odette
Chaix and Antonio Pereira and Amina Bensalah-Ledoux and Jean-Luc
Deschanvres and Bernard Moine},
title = {Thulium and ytterbium-doped titania thin films deposited by {MOCVD}},
journal = {Energy Procedia},
year = {2011},
volume = {10},
pages = {192 - 196},
number = {0},
note = {article},
abstract = {In this study we synthesized thin films of titanium oxide doped with
thulium and/or ytterbium to modify the incident spectrum on the solar
cells. This could be achieved either by photoluminescence up-converting
devices, or downconverting devices. As down-converter thin films
our work deals with thulium and ytterbium-doped titanium dioxide.
Thulium and ytterbium will act as sensitizer and emitter, respectively.
The rare-earth doped thin films are deposited by aerosol-assisted
MOCVD using organo-metallic precursors such as titanium dioxide acetylacetonate,
thulium and ytterbium tetramethylheptanedionate solved in different
solvents. These films have been deposited on silicon substrates under
different deposition conditions (temperature and dopant concentrations
for example). Adherent films have been obtained for deposition temperatures
ranging from 300°C to 600°C. The deposition rate varies from 0.1
to 1μm/h. The anatase phase is obtained at substrate temperature
above 400°C. Further annealing is required to exhibit luminescence
and eliminate organic remnants of the precursors. The physicochemical
and luminescent properties of the deposited films were analyzed versus
the different deposition parameters and annealing conditions. We
showed that absorbed light in the near-UV blue range is re-emitted
by the ytterbium at 980nm and by a thulium band around 800nm.},
comment = {European Materials Research Society Conference Symp. Advanced Inorganic
Materials and Concepts for Photovoltaics},
doi = {10.1016/j.egypro.2011.10.176},
issn = {1876-6102},
keywords = {CVD ; thulium; ytterbium; down-conversion; thin film; titanium oxide;
photovoltaic},
timestamp = {2011.07.18},
url = {http://www.sciencedirect.com/science/article/pii/S1876610211020029}
}
@conference{EMRSspring2010,
author = {Sébastien Forissier and Hervé Roussel and Carmen Jimenez and Odette
Chaix and Antonio Pereira and Amina Bensalah-Ledoux and Christine
Martinet and Olivier Raccurt and Jean-Luc Deschanvres and Bernard
Moine},
title = {Thulium/praseodymium and ytterbium-doped titanium dioxyde thin films
deposited by {MOCVD}},
booktitle = {EMRS Spring Meeting},
year = {2010},
address = {Strasbourg (France)},
month = {June},
note = {poster},
abstract = {The efficiency of solar cells is limited by the Shockley-Queisser
limit but this limit could be bypassed if we modify the solar spectrum
to better meet the semiconductor's bandgap. This could be achieved
either by photoluminescence, up-converting devices, or down-converting
devices. As down-converter thin films, this paper deals with praseodymium
and ytterbium-doped titanium dioxide. Praseodymium acts as sensitizer
and ytterbium as emitter. Thin film are deposited by aerosol-assisted
MOCVD using organo-metallic precursors such as titanium dioxide acetylacetonate,
praseodymium and ytterbium tetramethylheptanedionate solved in different
solvents. Different deposition conditions have been studied, depending
on temperature, dopant concentrations (…) on silicon substrates.
Deposition temperatures have been investigated from 300°C to 600°C.
The deposition rate varies in the 0.1-1 µm/h range. At low temperature
organic ligand residue are incorporated in the deposited film according
to FTIR spectrometry. This contamination is eliminated by post-annealing
treatments. The physicochemical and luminescent properties of the
deposited films were analysed versus the different deposition parameters
and annealing conditions.},
timestamp = {2011.07.18}
}
@comment{{jabref-meta: selector_publisher:}}
@comment{{jabref-meta: selector_author:}}
@comment{{jabref-meta: selector_journal:}}
@comment{{jabref-meta: selector_keywords:}}
bibtex2html 1.97.